The chemisorption of H{sub 2}C[Si(CH{sub 3}){sub 3}]{sub 2} and Si{sub 6}(CH{sub 3}){sub 12} on Si(100) surfaces
- Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
- Department of Physics, University of Wisconsin, Madison, Wisconsin 53701 (United States)
- Department of Chemistry, University of Western Ontario, London, N6A 5B7 (CANADA)
- Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
The chemisorption of bis(trimethylsilyl)methane (BTM, CH{sub 2}[Si(CH{sub 3}){sub 3}]{sub 2}) and dodecamethylcyclohexasilane (DCS, Si{sub 6}(CH{sub 3}){sub 12}) on clean Si(100) surfaces has been studied by C 1s core-level and valence-band photoemission spectroscopy. Our model for the deposition of carbon by BTM involves decomposition into a {endash}CH{sub 2}Si(CH{sub 3}){sub 3} surface moiety for room-temperature adsorption, which further decomposes upon annealing to 550{degree}C to form a surface terminated primarily by CH{sub x} units. DCS deposits almost three times as much C on the surface as BTM. The data are consistent with DCS undergoing a ring opening and bonding to the surface as polydimethylsilane chains. Annealing both adsorbates to 950{degree}C causes a large decrease in the C 1s signal due to the fact that Si segregates to the surface at temperatures above 900{degree}C. The valence-band photoemission of Si(100) dosed with DCS at 950{degree}C is in good agreement with that of {beta}-SiC, whereas the analogous BTM spectrum deviates significantly.
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 542549
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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