A soft x-ray photoemission study of the chemisorption and reaction of diethylsilane on Si(100)

Conference · Tue Jun 01 04:00:00 EDT 1993

OSTI ID:10186807

Lapiano-Smith, D A; Himpsel, F J ^[1]; Terminello, L J ^[2]

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1. International Business Machines Corp., Yorktown Heights, NY (United States). Thomas J. Watson Research Center
2. Lawrence Livermore National Lab., CA (United States)

Soft x-ray synchrotron radiation was utilized as the excitation source in a high-resolution photoemission experiment on chemisorption and subsequent reaction of diethylsilane on the Si(100) surface. We have found that diethylsilane chemisorbs dissociatively to form Si-CH{sub 2}CH{sub 3} surface species on Si(100) following a room temperature exposure. These species are identified by two very sharp peaks observed in the valence band spectra positioned at 17.9 and 14.3 eV binding energy. In addition, C 1s core level spectra, measured following exposures of Si(100) substrates as a function of surface temperature, show that carbon, in some form, exists on the Si surface following exposures at every temperature from room temperature to about 600C. While only {minus}CH{sub 2}CH{sub 3}, ethyl groups are observed on the surface at room temperature, these species appear to partially dehydrogenate at 300C, producing a mixture of {minus}CH{sub 2}CH{sub 3} groups and other intermediate carbonaceous species. At a growth temperature of about 400C the intermixing of elemental carbon with Si begins. At higher temperatures, we observe the continued degradation of diethylsilane to produce a Si + C alloy on the surface at 600C. Results indicate that diethylsilane has potential as a molecular precursor for SiC formation by chemical vapor deposition techniques.

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 10186807
• Report Number(s): UCRL-JC--114150; CONF-930405--48; ON: DE94001042
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201
CHEMICAL VAPOR DEPOSITION
CHEMISORPTION
PHOTOEMISSION
PRECURSOR
PREPARATION AND FABRICATION
SILANES
SILICON
SILICON CARBIDES
SOFT X RADIATION
SORPTIVE PROPERTIES
SURFACES