Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

Patent · Mon Dec 10 00:00:00 EST 1984

OSTI ID:5421009

Madan, A

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

• Research Organization: Solar Energy Research Inst. (SERI), Golden, CO (United States)
• DOE Contract Number: AC02-83CH10093
• Assignee: Dept. of Energy
• Application Number: ON: DE85017736
• OSTI ID: 5421009
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SEMICONDUCTOR JUNCTIONS
FABRICATION
SILICON SOLAR CELLS
AMORPHOUS STATE
DEPOSITION
DOPED MATERIALS
SEMICONDUCTOR MATERIALS
SILICON
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
JUNCTIONS
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture