High-stability 1. 5. mu. m external-cavity semiconductor lasers for phase-lock applications

Journal Article · Sat Jul 01 00:00:00 EDT 1989 · IEEE Photonics Technology Letters; (USA)

DOI:https://doi.org/10.1109/68.36024· OSTI ID:5418596

Kahn, J M; Burrus, C A; Raybon, G ^[1]

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1. AT and T Bell Labs., Holmdel, NJ (USA)

Applications using phase-locked semiconductor lasers, such as homodyne detection, require lasers with narrow linewidth and high-frequency stability. The authors describe the design and operating characteristics of two 1.5 {mu}m external-cavity semiconductor lasers built for such applications. The measured heat linewidth is 4 kHz, and the spectral density of relative frequency noise deviates significantly from the intrinsic white spectrum only at frequencies below 4 kHz. The authors estimate that this frequency jitter will induce approximately 1.1{sup 0} rms phase error in a second-order homodyne optical phase-lock loop that is optimized for the present beat linewidth.

• OSTI ID: 5418596
• Journal Information: IEEE Photonics Technology Letters; (USA), Journal Name: IEEE Photonics Technology Letters; (USA) Vol. 1:7; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
DESIGN
EVALUATION
FREQUENCY SELECTION
LASER CAVITIES
LASERS
MODE LOCKING
PERFORMANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STABILITY