Frequency offset locking of AlGaAs semiconductor lasers
Journal Article
·
· IEEE J. Quant. Electron.; (United States)
Frequency offset locking was proposed as a reliable electrical negative feedback technique for tracking and sweeping of a semiconductor laser frequency. A frequency stabilized laser was used as a master laser, whose residual frequency fluctuations were 140 (kHz) at the integration time (tau) of 100 ms less than or equal to tau less than or equal to 100 s. A digital phase comparator of a large dynamic range of 2 ..pi.. X 2/sup 11/ (rad) was employed in the feedback loop to reduce the phase fluctuations of the beat signal between the master and slave lasers. Performances of frequency tracking and sweeping of the slave laser were quantitatively evaluated, and the results are: residual frequency fluctuations of the beat signal were reduced as low as 11 (Hz) at tau = 100 s, which meant that the residual frequency fluctuations of the slave laser were almost equal to those of the master laser, i.e., the slave laser frequency tracked accurately to the master laser frequency. Both the capture range and lock range of the beat frequency were 1.22 GHz. Frequency tunable range of the slave laser was 36.6 GHz under the condition of frequency offset locking, in which the slave laser frequency fluctuations were maintained as low as the one given above.
- Research Organization:
- Graduate School at Nagatsuta, Tokyo Institute of Technology, Yokohama, Kanagawa 227
- OSTI ID:
- 6601879
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:4; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
FEEDBACK
FLUCTUATIONS
FREQUENCY CONTROL
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GHZ RANGE
GHZ RANGE 01-100
HZ RANGE
KHZ RANGE
KHZ RANGE 100-1000
LASER MATERIALS
LASERS
MATERIALS
MODE CONTROL
MODE LOCKING
OPERATION
OPTICS
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TUNING
VARIATIONS
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
FEEDBACK
FLUCTUATIONS
FREQUENCY CONTROL
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GHZ RANGE
GHZ RANGE 01-100
HZ RANGE
KHZ RANGE
KHZ RANGE 100-1000
LASER MATERIALS
LASERS
MATERIALS
MODE CONTROL
MODE LOCKING
OPERATION
OPTICS
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TUNING
VARIATIONS