Passive and active mode locking of a semiconductor laser without an external cavity

Journal Article · Sat Jun 15 04:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95727· OSTI ID:5783990

Lau, K Y; Ury, I; Yariv, A

This letter describes the first attempt to passively and actively mode lock a discrete semiconductor laser, i.e., one not coupled to an external cavity. Beat notes of the longitudinal modes of a 1.97-mm-long GaAlAs laser have been observed at 17.7 GHz. The spectral width of the beat note was approximately 100 kHz. Stable passive mode locking has been observed under appropriate operating conditions. Active mode locking by an externally injected microwave signal was also achieved.

• Research Organization: Ortel Corporation, 2015 West Chestnut Street, Alhambra, California 91803
• OSTI ID: 5783990
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GHZ RANGE
LASERS
MODE LOCKING
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS