Passive mode locking of buried heterostructure lasers with nonuniform current injection

Journal Article · Sun May 01 04:00:00 EDT 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94095· OSTI ID:6055039

Harder, C; Smith, J S; Lau, K Y; Yariv, A

In this letter we report on a novel method to passively mode lock a semiconductor laser. We present experimental results of GaAlAs buried heterostructure semiconductor laser with a split contact coupled to an external cavity. The split contact structure is used to introduce a controllable amount of saturable absorption which is necessary to initiate passive mode locking. Unlike previous passive mode locking techniques, the method presented does not rely on absorption introduced by damaging the crystal and is consequently inherently more reliable. We have obtained pulses with a full width at half-maximum of 35 ps at repetition frequencies between 500 MHz and 1.5 GHz.

• Research Organization: California Institute of Technology, Watson 128-95, Pasadena, California 91125
• OSTI ID: 6055039
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CONTACTS
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
EQUIPMENT
EXPERIMENTAL DATA
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GHZ RANGE
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASER CAVITIES
LASERS
MHZ RANGE
MODE LOCKING
NUMERICAL DATA
PNICTIDES
PULSES
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS