Process for preparing group Ib-IIIa-VIa semiconducting films
Patent
·
OSTI ID:541758
Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells. 4 figs.
- Research Organization:
- Midwest Research Institute
- Sponsoring Organization:
- National Renewable Energy Lab., Golden, CO (United States)
- DOE Contract Number:
- AC36-83CH10093
- Assignee:
- Univ. of Delaware, Newark, DE (United States)
- Patent Number(s):
- US 5,674,555/A/
- Application Number:
- PAN: 8-564,957
- OSTI ID:
- 541758
- Country of Publication:
- United States
- Language:
- English
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