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Title: Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen

Abstract

A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.

Inventors:
; ; ;
Publication Date:
Research Org.:
University of Maine, Toledo, OH (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175234
Patent Number(s):
6,852,614
Application Number:
09/815,958
Assignee:
University of Maine (Toledo, OH)
DOE Contract Number:  
NERL-ZAF-8-17619-14
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Compaan, Alvin D., Price, Kent J., Ma, Xianda, and Makhratchev, Konstantin. Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen. United States: N. p., 2005. Web.
Compaan, Alvin D., Price, Kent J., Ma, Xianda, & Makhratchev, Konstantin. Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen. United States.
Compaan, Alvin D., Price, Kent J., Ma, Xianda, and Makhratchev, Konstantin. 2005. "Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen". United States. https://www.osti.gov/servlets/purl/1175234.
@article{osti_1175234,
title = {Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen},
author = {Compaan, Alvin D. and Price, Kent J. and Ma, Xianda and Makhratchev, Konstantin},
abstractNote = {A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.},
doi = {},
url = {https://www.osti.gov/biblio/1175234}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {2}
}

Works referenced in this record:

Heavy p ‚Äźdoping of ZnTe by molecular beam epitaxy using a nitrogen plasma source
journal, February 1993