Secondary defect formation and gettering in MeV self-implanted silicon

Conference · Sat Nov 01 04:00:00 EST 1997

OSTI ID:541120

Brown, R A; Kononchuk, O; Radzimski, Z; Rozgonyi, G A ^[1]; Gonzalez, F ^[2]

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1. North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
2. Micron Technology, Inc., Boise, ID (United States)

Secondary defect and impurity distributions in MeV self-implanted Czochralski (Cz) and float-zone (FZ) silicon have been investigated by transmission electron microscopy, optical microscopy with preferential chemical etching, and secondary ion mass spectroscopy. The authors found that the ion fluence and the oxygen content of the implanted wafers affect the number and depth distribution of extended defects remaining after annealing. Intrinsic oxygen also redistributes during annealing of Cz wafers, producing two regions of relatively high oxygen concentration: one at extended defects near the ion projected range, and another, shallower region, which correlates with the distribution of vacancy-type defects. Both of these regions are also able to getter metallic impurities, depending on the implantation and annealing conditions. These defect issues may adversely affect the quality of the near surface device region, and must be controlled for successful gettering by ion implantation.

• OSTI ID: 541120
• Report Number(s): CONF-961202--; ISBN 1-55899-343-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL DEFECTS
GETTERING
IMPURITIES
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
SILICON