Characterization of conduction in LTG-GaAs

Conference · Mon Dec 30 23:00:00 EST 1996

OSTI ID:541064

Bourgoin, J C ^[1]; Khirouni, K ^[2]; Nagle, J ^[3]

---

1. Univ. Paris (France). Groupe de Physique des Solides
2. Faculte des Sciences, Monastir (Tunisia). Dept. de Physique
3. Lab. Central de Recherche, Orsay (France)

The dc and ac electrical conduction has been studied in GaAs layer grown by molecular beam epitaxy between 150 C and 400 C. It is found that the admittance versus frequency, Y({omega}), exhibits a universal behavior. At low frequencies Y({omega}) varies linearly as {omega} showing that conduction occurs via hopping. The temperature dependence of Y(0) indicates that this hopping conduction occurs in a partially filled band related to EL2 defects. The direct relationship between {omega}{sub m} and Y(0) demonstrates the existence of a percolation regime, i.e., of a conduction limited by insulating regions which the authors attribute to space charge regions developed around As precipitates.

• OSTI ID: 541064
• Report Number(s): CONF-960450--; ISBN 0-7803-3179-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER MOBILITY
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
GALLIUM ARSENIDES
TEMPERATURE DEPENDENCE