Leakage currents in Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films for ultrahigh-density dynamic random access memories
- Institut fuer Werkstoffe der Elektrotechnik (IWE), RWTH Aachen University of Technology, 52056 Aachen (Germany)
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States)
(Ba,Sr)TiO{sub 3} (BST) thin films grown by chemical vapor deposition and with platinum (Pt) top and bottom electrodes have been characterized with respect to the leakage current as a function of temperature and applied voltage. The data can be interpreted via a thermionic emission model. The Schottky approximation accounts for superohmic behavior at higher fields, but the barrier lowering is stronger than expected from this theory. While the leakage mechanism is comparable to SrTiO{sub 3} thin films prepared by chemical solution deposition, the absolute values of the leakage current are significantly lower for the metalorganic chemical vapor deposition (MOCVD) prepared BST film. This is presumably due to a more homogeneous microstructure of the latter and may also be due to different electrode processing. The influence of the film thickness on the leakage in combination with additional findings is used to discuss the field distribution in the films under a dc voltage stress. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 538420
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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