MOCVD growth and characterization of (Ba{sub x}Sr{sub 1{minus}x})Ti{sub 1+y}O{sub 3+z} thin films for high frequency devices
The authors have investigated the structural and electrical characteristics of (Ba{sub x}Sr{sub 1{minus}x})Ti{sub 1+y}O{sub 3+z} (BST) thin films. The BST thin films were deposited at 650 C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350 C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700 C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 751872
- Report Number(s):
- ANL/MSD/CP-100847; TRN: AH200018%%396
- Resource Relation:
- Conference: MRS '99 Fall Meeting, Boston, MA (US), 11/29/1999--12/03/1999; Other Information: PBD: 18 Jan 2000
- Country of Publication:
- United States
- Language:
- English
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