Growth and characterization of Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on Si with Pt electrodes

Journal Article · Thu Jul 01 00:00:00 EDT 1999 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.582098· OSTI ID:359806

Kinder, L; Zhang, X F; Grigorov, I L; Kwon, C; Jia, Q X ^[1]; Luo, L; Zhao, J ^[2]

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1. Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
2. High k Strategic Product Unit, PDD Product Business Group, Applied Materials, Incorporated, Santa Clara, California 95054 (United States)

Both metalorganic chemical vapor deposition and pulsed laser deposition have been used to grow Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films on Si with Pt electrodes. The smoother Pt electrodes allow the BST to grow with greater crystallinity. Thin film Pt/BST/Pt capacitors with a dielectric thickness of around 170 nm show dielectric constants over 400 and dielectric losses in the range of 0.01{endash}0.03 at 10 kHz. The electric/dielectric properties of the BST films are further improved by first depositing a 27 nm BST seed layer by metalorganic chemical vapor deposition followed by a 145 nm BST layer deposited by pulsed laser deposition. {copyright} {ital 1999 American Vacuum Society.}

• OSTI ID: 359806
• Report Number(s): CONF-981126--
• Journal Information: Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 4 Vol. 17; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM COMPOUNDS
CAPACITORS
CHEMICAL VAPOR DEPOSITION
DIELECTRIC PROPERTIES
FERROELECTRIC MATERIALS
PERMITTIVITY
PLATINUM
SILICON
STRONTIUM COMPOUNDS
THICKNESS
THIN FILMS
TITANATES