EL2-related defects in neutron irradiated GaAs/sub 1//sub -x/P/sub x/ alloys

Journal Article · Tue Oct 15 00:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95987· OSTI ID:5384141

Munoz, E; Garcia, F; Jimenez, B; Calleja, E; Gomez, A; Alcober, V

The generation of EL2-related defects in GaAsP alloys by fast neutron irradiation has been studied through deep level transient spectroscopy and photocapacitance techniques. After irradiation p-n junctions were not annealed at high temperatures. In the composition range x>0.4, fast neutrons generate a broad center at E/sub c/-0.7 eV that it is suggested to belong to the EL2 family. The presence of photocapacitance quenching effects has been taken as a preliminary fingerprint to make the above assignment. From computer analysis of the nonexponential transient capacitance waveforms, evidence that neutron irradiation creates a family of midgap levels, EL2-related, is found.

• Research Organization: Dipartmento Electronica, ETSI Telecomunicacion, Universidad Politecnica, Ciudad Universitaria, Madrid-28040, Spain
• OSTI ID: 5384141
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CAPACITANCE
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEEP LEVEL TRANSIENT SPECTROSCOPY
DIFFRACTION
ELECTRICAL PROPERTIES
ENERGY LEVELS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEAT TREATMENTS
JUNCTIONS
NEUTRON DIFFRACTION
P-N JUNCTIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCATTERING
SEMICONDUCTOR JUNCTIONS
SPECTROSCOPY