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Unification of the properties of the EL2 defect in GaAs

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)

We provide experimental unification of the properties of EL2 in GaAs, linking the measurements of optical absorption, deep-level transient spectroscopy, electron paramagnetic resonance (EPR), magnetic circular dichroism (MCD), optically detected electron-nuclear double resonance (ODENDOR). Results show that the EL2 defect has two energy levels, gives rise to the zero-phonon line in the neutral charge state, and gives rise to the EPR quadruplet, MCD, and ODENDOR signals in the singly ionized state. These manifestations disappear when EL2 is transferred to the metastable state. Any discussion of the properties of the EL2 defect must be consistent with these unified characteristics.

Research Organization:
Center for Advanced Materials, Lawrence Berkeley Laboratory, Department of Materials Science, University of California, Berkeley, California 94720
OSTI ID:
6358261
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 39:8; ISSN PRBMD
Country of Publication:
United States
Language:
English