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Defect metastability in surfaces: A study of EL2 defect in GaAs(110)

Journal Article · · Physical Review, B: Condensed Matter
 [1]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

Although it has been widely accepted that EL2 in GaAs is an As antisite, the identity of the metastable state of EL2thinsp(=EL2{sup {asterisk}}) has not been confirmed by experiment. Here it is suggested that cross-sectional scanning tunneling microscopy may be used to identify EL2{sup {asterisk}}. My suggestion is based on a comprehensive first-principles total energy study of surface defect metastability. It reveals rich structures of the EL2{sup {asterisk}} near the surface. The energy difference between EL2{sup {asterisk}} and EL2 can be reduced to only a tenth of that bulk due to interaction with relaxed surface atoms. {copyright} {ital 1999} {ital The American Physical Society}

OSTI ID:
362690
Journal Information:
Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 7 Vol. 60; ISSN 0163-1829; ISSN PRBMDO
Country of Publication:
United States
Language:
English