On the correlation between high-order bands and some photoluminescence lines in neutron-irradiated FZ silicon
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China (CN)
The defects in float-zone silicon irradiated by fast neutron with fluences up to 4.0{times}10{sup 18} {ital n}/cm{sup 2}, followed by various heat treatments, have been studied by low-temperature photoluminescence (PL) and infrared absorption measurement with emphasis upon the high-order band (HOB) and its relationship with the commonly observed PL-lines such as {ital I}{sub 1} (1.018 eV) and {ital I}{sub 3}(1.039 eV). It has been shown that band 1124 cm{sup {minus}1}, unlike the other higher-order bands, is considerably broader for the sample annealed at low temperature (for example, 385 {degree}C) with FWHM as large as 3 meV and is apparently narrowed as the anneal temperature was increased. We have obtained the {ital I}{sub 3} line and its phonon replicas in the near-infrared absorption measurement, further proving the transition involved in the {ital I}{sub 3} defect center to be electronic in nature. The combination of luminescence and absorption experiment results demonstrated that the HOB could be well developed after PL lines such as {ital I}{sub 1} and {ital I}{sub 3} disappeared completely, or vice versa. PL lines could be observed before the HOB emerged, therefore ruling out the possibility proposed by earlier authors that the HOB could be correlated with some PL lines.
- OSTI ID:
- 5374549
- Journal Information:
- Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 66:8; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ABSORPTION SPECTROSCOPY
BARYONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HADRONS
HEAT TREATMENTS
INFRARED RADIATION
LUMINESCENCE
MELTING
NEUTRONS
NUCLEONS
PHASE TRANSFORMATIONS
PHONONS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
QUASI PARTICLES
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON
SPECTROSCOPY
ULTRALOW TEMPERATURE
ZONE MELTING