Scanning room-temperature photoluminescence in polycrystalline silicon
- Center for Microelectronics Research, University of South Florida, Tampa, Florida 33620 (United States)
- Lawrence Berkeley National Lab, Berkeley, California 94720 (United States)
- ASE Americas Incorporated, Billerica, Massachusetts 01821 (United States)
Photoluminescence (PL) mapping was performed on polycrystalline silicon wafers at room temperature. Two PL bands are observed: (1) a band-to-band emission with a maximum at 1.09 eV, and (2) a deep {open_quotes}defect{close_quotes} luminescence at about 0.8 eV. PL mapping of 10; cm{times}10; cm wafers revealed inhomogeneity of the band-to-band PL intensity which could be correlated to the distribution of minority carrier diffusion length in the wafer bulk. We have also observed that the intensity of the 0.8 eV band is strongest along those grain boundaries where the band-to-band PL is suppressed as well as minority carrier diffusion length. The origin of the 0.8 eV luminescence band is discussed. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 328581
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 74; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Diffusion length and resistivity distribution characteristics of silicon wafer by photoluminescence
Temperature-Dependent Photoluminescence Imaging and Characterization of a Multi-Crystalline Silicon Solar Cell Defect Area