Deep-level transient spectroscopy and photoluminescence studies of electron-irradiated Czochralski silicon

Journal Article · Mon Sep 15 00:00:00 EDT 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337198· OSTI ID:5392610

Awadelkarim, O O; Weman, H; Svensson, B G; Lindstroem, J L

Isothermal annealing of electron-irradiated Czochralski silicon samples (n-italic-type) has been performed at 335 /sup 0/C. The annealing process was studied using deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The dominating level in the DLTS spectra directly after irradiation is located --0.18 eV below the conduction band and has previously been assigned to a vacancy-oxygen center by other authors. During the anneal the concentration of vacancy-oxygen centers decreases, and simultaneously a new level, --0.20 eV below the conduction band, grows up. It is shown that the defect giving rise to this new level may be vacancy related. The PL spectra directly after irradiation are dominated by the G-italic line (969 meV) and the C-italic line (790 meV). The G-italic line disappears rapidly, while the C-italic line is still present after 320 min at 335 /sup 0/C. During the heat treatment some new lines appear, e.g., the P-italic line (767 meV) and a line at 950 meV. Based on the annealing kinetics, it is speculated that the 950-meV defect may be vacancy related.

• Research Organization: Department of Physics and Measurement Technology, Linkoeping Institute of Technology, S-581 83 Linkoeping, Sweden
• OSTI ID: 5392610
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CZOCHRALSKI METHOD
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRON COLLISIONS
ELEMENTS
HEAT TREATMENTS
HIGH TEMPERATURE
KINETICS
LUMINESCENCE
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
SPECTROSCOPY
VACANCIES