Optical properties of {alpha}-irradiated and annealed Si-doped GaAs
- Department of Physics, University of Pretoria, Pretoria 0002 (South Africa)
The influence of irradiation by {alpha} particles and subsequent isochronal annealing on n-GaAs doped with silicon, was investigated. Photoluminescence (PL) studies revealed the formation of an induced radiation center at 1.486 eV. In addition to the PL investigation we also employed capacitance{endash}voltage (C{endash}V) measurements and deep level transient spectroscopy (DLTS). The C{endash}V measurements indicate a slight reduction in n-type carriers in treated samples and the DLTS spectra showed a number of commonly observed deep levels in irradiated samples (not annealed), which disappear after annealing. Based on the experimental evidence we propose that the 1.486 eV band is due to a donor-acceptor-pair transition. Alternative mechanisms are also discussed. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 496387
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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