InAsSb-based mid-infrared lasers (3.5--3.9 {micro}m) and light-emitting diodes with AlAsSb claddings and semi-metal electron injection grown by metal-organic chemical vapor deposition
Mid-infrared (3--5 {micro}m) lasers and LED`s are being developed for use in chemical sensor systems. As-rich, InAsSb heterostructures display unique electronic properties that are beneficial to the performance of these midwave infrared emitters. The metal-organic chemical vapor deposition (MOCVD) growth of AlAs{sub 1{minus}x}Sb{sub x} cladding layers and InAsSb/InAsP superlattice active regions are described. A regrowth technique has been used to fabricate gain-guided, injection lasers using undoped (p-type) AlAs{sub 0.16}Sb{sub 0.84} for optical confinement. In device studies, the authors demonstrate lasers and LEDs utilizing the semi-metal properties of a p-GaAsSb/n-InAs heterojunction as a source for injection of electrons into the active region of emitters. This avoids the difficulties associated with n-type doping of AlAsSb cladding layers required for conventional p-n junction lasers and also provides a means for construction of active regions with multiple gain stages. Gain guided injected lasers employing a strained InAsSb/InAs multi-quantum well active region operated up to 210 K in pulsed mode, with an emission wavelength of 3.8--3.9 {micro}m. A characteristic temperature of 40 K was observed to 140 K and 29 K from 140 K to 210 K. An optically pumped laser with an InAsSb/InAsP superlattice active region is also described. The maximum operating temperature of this 3.7 {micro}m laser was 240 K.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 537357
- Report Number(s):
- SAND--96-1964C; CONF-970231--45; ON: DE97006880; BR: YN0100000
- Country of Publication:
- United States
- Language:
- English
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