Preparation of AlAsSb and mid-infrared (3-5 {mu}m) lasers by metal-organic chemical vapor deposition
Mid-infrared (3-5 {mu}m) infrared lasers and LEDs are being developed for use in chemical sensor systems. As-rich, InAsSb heterostructures display unique electronic properties that are beneficial to the performance of these midwave infrared emitters. The authors have grown AlAs{sub 1{minus}x}Sb{sub x} epitaxial layers by metal-organic chemical vapor deposition using trimethylamine (TMAA) or ethyldimethylamine alane (EDMAA), triethylantimony (TESb) and arsine. They examined the growth of AlAs{sub 1{minus}x}Sb{sub x} using temperatures of 500 to 600 {degrees}C, pressures of 70 to 630 torr, V/III ratios of 1-27, and growth rates of 0.3 to 2.7 {mu}m/hour in a horizontal quartz reactor. The semi-metal properties of a p-GaAsSb/n-InAs heterojunction are utilized as a source for injection of electrons into the active region of lasers. A regrowth technique has been used to fabricate gain-guided lasers using AlAs{sub 1{minus}x}Sb{sub x} for optical confinement with either a strained InAsSb/InAs multi-quantum well (MQW) or an InAsSb/InAsP strained layer superlattice (SLS) as the active region. Under pulsed injection, the InAsSb/InAs MQW laser operated up to 210K with an emission wavelength of 3.8-3.9 {mu}m. Under pulsed optical pumping, the InAsSb/InAsP SLS operated to 240K with an emission wavelength of 3.5-3.7 {mu}m. LED emission has been observed with both active regions in both p-n junction and semi-metal injection structures.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 513535
- Report Number(s):
- SAND--96-1699C; CONF-961202--122; ON: DE97006878
- Country of Publication:
- United States
- Language:
- English
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