Novel mid-infrared lasers with compressively strained InAsSb active regions
Conference
·
OSTI ID:432953
Mid-infrared lasers grown by MOCVD with AlAsSb claddings and strained InAsSb active regions are reported. A 3.8--3.9 {micro}m injection laser with a pseudomorphic InAsSb multiple quantum well active region lased at 210 K under pulsed operation. A semi-metal layer acts as an internal electron source for the injection laser. An optically pumped laser with an InAsSb/InAsP strained-layer superlattice active region was demonstrated at 3.7 {micro}m, 240 K.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 432953
- Report Number(s):
- SAND--97-0113C; CONF-961202--24; ON: DE97002462
- Country of Publication:
- United States
- Language:
- English
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