Multistage Infrared Emitters Based on InAsSb Strained Layers Grown by Metal-Organic Chemical Vapor Deposition
Conference
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OSTI ID:2825
- Sandia National Laboratories
We report on the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAaSb multistage emitters using a high speed rotating disk reactor. The devices contain AlAsSb cladding and strained InAsSb active regions. These emitters have multistage, type I InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multistage devices. Broadband LED's produced 2 mW average power at 3.7 {micro}m and 80 K and 0.1 mW at 4.3 {micro}m and 300K. A multistage, 3.8-3.9 {micro}m laser structure operated up to T=180 K. At 80 K, peak-power > 100 mW/facet and a high slope-efficiency (48%) were observed in these gain guided lasers.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 2825
- Report Number(s):
- SAND98-1996C
- Country of Publication:
- United States
- Language:
- English
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