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Chemical modifications at Teflon interfaces induced by MeV ion beams

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.344083· OSTI ID:5372798
 [1]; ;  [2]
  1. Department of Radiation Sciences, Uppsala University, Box 535, S-751 21 Uppsala, Sweden (SE)
  2. Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala, Sweden
The effect of MeV ion beams incident on Teflon surfaces was studied by x-ray photoelectron spectroscopy (XPS). Irradiation with 20-MeV {sup 35}Cl{sup 4+} was carried out at doses ranging from 10{sup 12} to 10{sup 14} ions/cm{sup 2}. Residual gas analysis was performed during irradiation to identify molecular fragments released from the Teflon surface. XPS spectra were recorded before and after ion irradiation. On some substrates, gold thin films were evaporated before and after ion bombardment, respectively, to detect possible modifications in thin-film adhesion. Changes in the XPS spectra were interpreted in terms of chemical and structural shifts, and related to the observed adhesion modifications.
OSTI ID:
5372798
Journal Information:
Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 66:8; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English