A study of switching behavior in Pb(Zr,Ti)O{sub 3} thin films using x-ray diffraction
- Sandia National Labs., Albuquerque, NM (United States)
- Bellcore, Red Bank, NJ (United States)
Pb(Zr,Ti)O{sub 3} (PZT) thin films are being developed for use in optical and electronic memory devices. To study ferroelectric switching behavior, the authors have produced relatively untextured PZT thin films on Si substrates. They have developed a method for using X-ray diffraction to observe domain switching in situ. This study involved the use of a micro-diffractometer to monitor the switching behavior in relatively small (0.7 mm diameter) electroded areas. Diffraction analyses were done while DC voltages were applied and removed, representing several places in the hysteresis loop. In particular, the authors were looking for relative intensity changes in the [h00],[00l] diffraction peaks as a function of position in the hysteresis loop. This study indicates that the 90{degrees} domain switching exhibited by bulk ferroelectrics, is very limited in films on Si when grain sizes are less than about 1{mu}m.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 53709
- Report Number(s):
- SAND--95-0761C; CONF-941144--145; ON: DE95010859
- Country of Publication:
- United States
- Language:
- English
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