Lasing transitions in GaAs/GaAs/sub 1-x/P/sub x/ strained-layer superlattices with x = 0. 1--0. 5

Journal Article · Sun Sep 15 04:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96123· OSTI ID:5368696

Gourley, P L; Hohimer, J P; Biefeld, R M

The role of strain in modifying lasing transition energy and gain coefficient in photopumped GaAs/GaAs/sub 1-x/P/sub x/ strained-layer superlattices is investigated by examining photoluminescence, excitation, and lasing spectra for samples with x in the range 0.1--0.5. Over this range, the lasing transition energy increases 50 meV, independent of quantum size effects. The compressive biaxial strain present in the GaAs layers is expected to significantly increase the gain coefficient for the Vertical Bar3/2, +- 1/2> ''light'' hole transitions. However, polarization measurements of the lasing spectra show no evidence for lasing on the TM mode Vertical Bar3/2, +- 1/2> transitions and show lasing only on the TE mode Vertical Bar3/2, +- 3/2> ''heavy'' hole transitions.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5368696
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
EMISSION
EMISSION SPECTRA
ENERGY-LEVEL TRANSITIONS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HOLES
LASERS
LUMINESCENCE
OPTICAL PUMPING
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
POLARIZATION
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
STIMULATED EMISSION
STRAINS
SUPERLATTICES