Quantum size effects in GaAs/GaAs/sub x/P/sub 1//sub -x/ strained-layer superlattices

Journal Article · Mon Oct 01 00:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95385· OSTI ID:6565969

Gourley, P L; Biefeld, R M

We report the first observations of quantum size effects in GaAs/GaAs/sub 0.5/P/sub 0.5/ strained-layer superlattices (SLS's). Using excitation and photoluminescence spectroscopies, we have observed optical transitions between excited states of the electron and hole quantum wells. These observations provide a measure of the biaxial compressive strain in the GaAs layers, interfacial roughness, and valence-band offset for the GaAs/GaP heterojunction.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6565969
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
COMPRESSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
HOLES
INTERFACES
JUNCTIONS
LUMINESCENCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
ROUGHNESS
SEMICONDUCTOR JUNCTIONS
STRAINS
SUPERLATTICES
SURFACE PROPERTIES
VALENCE