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Deep ultraviolet photoresist based on tungsten polyoxometalates and poly(vinyl alcohol) for bilayer photolithography

Journal Article · · Journal of the Electrochemical Society; (United States)
DOI:https://doi.org/10.1149/1.2069303· OSTI ID:5366504
; ;  [1]
  1. Dept. of Chemical Engineering, Univ. of Texas at Austin, Austin, TX (US)

In this paper a negative tone deep ultraviolet resist, a mixture of phosphotungstic acid and poly(vinyl alcohol) is described. This resist has {lt}100 mJ cm{sup {minus}2} sensitivity and resolves {le}0.3 {mu}m features. Even though the photochemistry involves chemical amplification, the exposed patterns are stable and the process tolerates hours between the exposure and the post-bake steps. The resist is spun from an aqueous solutio, and its wet processing is also aqueous. This resist is used in a bilayer scheme, where advantage is taken of both the resistance of the tungsten oxide to oxygen plasmas and its easy stripping in fluorine-containing plasmas. Because poly(vinyl alcohol) is intrisincally a wetting agent, pinhole-free resist films of {approximately}1000 {Angstrom} thickness can be spun. These thin coatings provide sufficient oxygen plasma etch resistance to allow patterning of a thick 1.5 {mu}m novolac planarizing layer underneath the resist.

OSTI ID:
5366504
Journal Information:
Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 139:3; ISSN 0013-4651; ISSN JESOA
Country of Publication:
United States
Language:
English