Wide-bandwidth and high-power InGaAsP distributed feedback lasers

Journal Article · Wed Nov 15 04:00:00 EST 1989 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.343820· OSTI ID:5365612

Dutta, N K; Wang, S J; Piccirilli, A B; Karlicek, Jr, R F; Brown, R L; Washington, M; Chakrabarti, U K ^[1]; Gnauck, A ^[2]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (USA)
2. AT T Bell Laboratories, Crawford Hill, New Jersey 07733 (USA)

The fabrication and performance characteristics of a wide-bandwidth InGaAsP laser diode structure are described. The wide bandwidth is achieved using semi-insulating Fe-doped InP current blocking layers around the active region. The lasers have a bandwidth of 18 GHz at 20 mW, emit 50 mW in a single transverse and longitudinal mode, have rise and fall times of less than 40 ps, have low chirp (FWHM{lt}1 A) under modulation, and exhibit harmonic distortion characteristics in agreement with fundamental calculations using a rate equation model. Error-free transmission with no dispersion penalty has been obtained using these lasers in a transmission experiment at 8 Gb/s over 76 km of fiber.

• OSTI ID: 5365612
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 66:10; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
DOPED MATERIALS
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IRON
LASERS
MATERIALS
MATHEMATICAL MODELS
METALS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRAL RESPONSE
TRANSITION ELEMENTS