High-power, high-speed 1. 3-. mu. m semi-insulating-blocked distributed-feedback lasers

Journal Article · Tue Nov 01 04:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341201· OSTI ID:6777901

Koren, U; Koch, T L; Corvini, P J; Miller, B I; Eisenstein, G; Tucker, R S; Su, Y K; Capik, R J

We describe a high-performance 1.3-..mu..m InGaAsP/InP distributed feedback buried heterostructure laser which is compatible with all-vapor-phase growth technology. Current confinement is provided by metalorganic vapor-phase growth of semi-insulating InP blocking layers. The laser has a small-signal bandwidth of 12.5 GHz, a large signal digital capability at 16 Gb/s, and maintains single-frequency operation to output powers as high as 23 mW.

• Research Organization: ATandT Bell Laboratories, Holmdel, New Jersey 07733
• OSTI ID: 6777901
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DATA
EPITAXY
EXPERIMENTAL DATA
FEEDBACK
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
VAPOR PHASE EPITAXY