High-speed complex-coupled strain-compensated AlGaInAs/InP 1.5 {micro}m DFB laser diodes
Book
·
OSTI ID:536314
- Technische Hochschule Darmstadt (Germany). Inst. fuer Hochfrequenztechnik
- Deutsche Telekom AG., Darmstadt (Germany). Technologiezentrum
The technology and characterization of high-speed partly loss-coupled distributed feedback (DFB) 1.55 {micro}m laser diodes realized on a strain-compensated AlGaInAs/InP MBE/MOVPE grown epitaxial structure is presented. The authors observe low thresholds, SMSRs of 50dB, very high {minus}3dB intensity modulation (IM) bandwidths up to 23GHz and good large signal behavior.
- OSTI ID:
- 536314
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:536276