Superluminescent diodes in the spectral range of 1.5 – 1.6 μm based on strain-compensated AlGaInAs/InP quantum wells
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- LLC Sigm Plus, ul. Vvedenskogo 3, 117342 Moscow (Russian Federation)
Superluminescent diodes based on AlGaInAs/InP separate-confinement double heterostructures with strain-compensated quantum wells are investigated. The influence of elastic strains in the active region on the output characteristics of the devices is analysed. It is shown that such a design of a superluminescent diode allows an optical power of more than 5 mW, a radiation spectrum width of more than 60 nm, a degree of output radiation polarisation up to 30 dB to be obtained at the output of a single-mode fibre, and has a great potential for further improvement. (paper)
- OSTI ID:
- 23141997
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 9 Vol. 50; ISSN 1063-7818; ISSN QUELEZ
- Country of Publication:
- United States
- Language:
- English
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