Strain-compensated MBE grown AlGaInAs/AlGaInAs/InP QWs for photonic devices
- Deutsche Telekom, Darmstadt (Germany). Forschungszentrum
In recent years AlGaInAs QW structures were rarely grown and applied compared to the GaInAsP material system. For modern optoelectronic device applications, QW structures including quaternary AlGaInAs material both in the wells and barriers are very attractive, since the well width L{sub z} and barrier widths L{sub B} can be optimized independently of the selected amount of strain. The band discontinuities in AlGaInAs are advantageous for many laser applications. The spectral and compositional refractive index variation for AlGaInAs offers more flexibility in laser structure design than for GaInAsP. Recently, the authors reported on the first strain-compensated QWs at {lambda}{approximately}1.55{micro}m grown by MBE, combining compressively strained wells and tensile strained barriers. This overcomes the total critical layer thickness restrictions and enables a free choice of the number of QWs in device design.
- OSTI ID:
- 536276
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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