MBE-grown Al{sub x}In{sub 1{minus}x}As/Ga{sub y}In{sub 1{minus}y}As/InP-electroabsorption modulators with enhanced Stark-effect
- Bosch Telecom GmbH, Backnang (Germany)
Electroabsorption modulators (EAMs) with Al{sub x}Ga{sub y}In{sub 1{minus}x{minus}y}As-Quantum-Wells (QWs) are promising for high-bitrate distribution-network transmitters, which require high bandwidth, high extinction-ratio and controlled chirp. The substitution of quaternary material by a Short-Period-Superlattice (SPSL) leads to an enhanced Stark-Shift, preferably in the 1.3 {micro}m wavelength range. Optimum performance for 1.55 {micro}m-EAMs is achieved, using tensile strained QWs with degenerated valencebands at the off-state. Samples are processed in a standard Ridge-Waveguide (RWG) technology and are characterized. All epitaxial layers are grown in a Solid Source MBE, using valved cracker cells for As and P.
- OSTI ID:
- 536212
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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