Wannier-Stark effect in Ga{sub x}In{sub 1{minus}x}As{sub z}P{sub 1{minus}z}/Ga{sub y}In{sub 1{minus}y}As{sub z}P{sub 1{minus}z} superlattices on InP
Book
·
OSTI ID:536214
- RWTH Aachen (Germany)
In summary, the authors observed the Wannier-Stark effect in MOVPE-grown strain balanced Ga{sub x}In{sub 1{minus}x}As{sub z}P{sub 1{minus}z}/Ga{sub y}In{sub 1{minus}y}As{sub z}P{sub 1{minus}z} superlattices with constant As-content. The observed transitions could be well described by a simple theoretical model. By careful design of the shallow superlattice, the advantages of its weak carrier confinement can be combined with operation at room temperature. First measurements in waveguide configuration yield an electroabsorptive modulation ratio of 42 dB/(Vmm), which is comparable with current CBE-grown GaInAs/InP superlattice data.
- OSTI ID:
- 536214
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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Book
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OSTI ID:536212
Realization of Ga{sub x}In{sub 1{minus}x}As{sub z}P{sub 1{minus}z}/Ga{sub y}In{sub 1{minus}y}As{sub z}P{sub 1{minus}z}-superlattices with abrupt interfaces for optoelectronics at {lambda} = 1.55 {micro}m
Book
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Mon Dec 30 23:00:00 EST 1996
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OSTI ID:536255
Optical switching in N times N arrays of individually addressable electroabsorption modulators based on Wannier--Stark carrier localization in GaAs/GaAlAs superlattices
Journal Article
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Thu Jan 31 23:00:00 EST 1991
· Journal of the Optical Society of America, Part B: Optical Physics; (USA)
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OSTI ID:6186143