Realization of Ga{sub x}In{sub 1{minus}x}As{sub z}P{sub 1{minus}z}/Ga{sub y}In{sub 1{minus}y}As{sub z}P{sub 1{minus}z}-superlattices with abrupt interfaces for optoelectronics at {lambda} = 1.55 {micro}m
- RWTH Aachen (Germany)
Semiconductor superlattices attract the interest of physicists as well as of engineers since their electronic and optical properties are affected by externally applied voltages, e.g., for optical switching devices. In LP-MOVPE grown strain-compensated quaternary GaInAsP superlattices a degradation mechanism was observed which reduces the maximum applicable strain in the individual wells and barriers. It causes composition fluctuations and/or modulation of layer thickness. This effect already occurs at rather low strain values, which do not yet lead to the creation of dislocations. It can be reduced by an enhanced total reactor pressure and appropriate growth temperature. For optimized growth conditions high quality superlattices are achieved, which show already at room temperature a distinct Wannier-Stark effect.
- OSTI ID:
- 536255
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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