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Transport in GaAs/Al{sub x}Ga{sub 1-x}As superlattices with narrow minibands: Effects of interminiband tunneling

Journal Article · · Semiconductors
; ;  [1]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
The results of experimental investigations for the I-V characteristics are presented for superlattices based on GaAs/Al{sub x}Ga{sub 1-x}As with thin barriers in the electric-field region with an intense interminiband tunneling. The regular features for the I-V characteristics are found in the voltage range adequate to the static positive differential conductivity in the superlattice. On the basis of calculations for the Wannier-Stark levels, it is established that the observed features are associated with the resonant tunneling between these levels belonging to quantum wells located at a distance from 6-13 superlattice periods from each other. It is noted that the similar resonant delocalization of Wannier-Stark wave functions can lead to the existence of dynamic negative differential conductivity for the laser type of an appreciable value in such superlattices.
OSTI ID:
21260419
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 43; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English