Wannier-Stark states in a superlattice of InAs/GaAs quantum dots

Journal Article · Tue Jun 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610060126· OSTI ID:21562279

Vasil'ev, A P; Nevedomskii, V N ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

Electron and hole emission from states of a ten-layer system of tunneling-coupled vertically correlated InAs/GaAs quantum dots (QDs) is studied experimentally by capacitance-voltage measurements and deep-level transient spectroscopy. The thickness of GaAs interlayers separating sheets of InAs QDs was {approx}3 nm, as determined from transmission electron microscope images. It is found that the periodic multimo-dal DLTS spectrum of this structure exhibits a pronounced linear shift as the reverse-bias voltage U{sub r} applied to the structure is varied. The observed behavior is a manifestation of the Wannier-Stark effect in the InAs/GaAs superlattice, where the presence of an external electric field leads to the suppression of coupling between the wave functions of electron states forming the miniband and to the appearance of a series of discrete levels called Wannier-Stark ladder states.

• OSTI ID: 21562279
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC COMPOUNDS
ARSENIDES
CAPACITANCE
COUPLING
DEEP LEVEL TRANSIENT SPECTROSCOPY
DIMENSIONS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELECTRONS
ELEMENTARY PARTICLES
EMISSION
FERMIONS
FUNCTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMAGES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INHIBITION
LAYERS
LEPTONS
MICROSCOPY
NANOSTRUCTURES
PERIODICITY
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM DOTS
SPECTROSCOPY
STARK EFFECT
SUPERLATTICES
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
TUNNEL EFFECT
VARIATIONS
WAVE FUNCTIONS