Wannier-stark effect in Ge/Si quantum dot superlattices

Journal Article · Sat Mar 15 04:00:00 EDT 2008 · Semiconductors

DOI:https://doi.org/10.1007/S11453-008-3011-8· OSTI ID:21087910

Cirlin, G E; Tonkikh, A A ^[1]; Zakharov, N D ^[2]

---

1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
2. Max-Planck-Institut fuer Mikrostrukturphysik (Germany)

Deep level transient spectroscopy (DLTS) measurements were performed to study electron emission from quantum states in a 20-layer Ge quantum-dot superlattice (QDSL) in a Ge/Si p-n heterostructure. It was established that the changes in the DLTS spectra depend heavily on the magnitude of the applied reverse bias U{sub r}. Three regions of the reverse bias U{sub r} were identified, corresponding to the manifestation of the three modes of the Wannier-Stark effect: Wannier-Stark ladder mode, Wannier-Stark localization, and nonresonant Zener tunneling mode. Furthermore, it was found that the appearance of DLTS peaks for all three modes is associated with electron emission from deep-level defects via Wannier-Stark localized states arising as a result of the splitting of the electron miniband of the Ge/Si QDSL.

• OSTI ID: 21087910
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 42; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRON EMISSION
LAYERS
QUANTUM DOTS
SPECTRA
STARK EFFECT
SUPERLATTICES
TUNNEL EFFECT