Fabrication and optical properties of self assembled InGaAs quantum dots embedded in microcavities
Book
·
OSTI ID:536307
- Univ. of Tokyo, Minato (Japan). Inst. of Industrial Science
The authors demonstrate the fabrication of a vertical microcavity laser structure with an active layer of Stranski-Krastanow quantum dots. The microcavity consists of an InGaAs quantum dot layer grown by MOCVD, located between two AlAs/Al{sub 0.2}Ga{sub 0.8}As distributed Bragg-reflector mirrors. The length of the microcavity was 1 {lambda} ({lambda} = 1,007 nm). Very narrow linewidths of the spontaneous PL-emission was observed as a clear evidence of the cavity effect. The PL-linewidth of reference samples that were grown without a cavity proves to be significantly broader.
- OSTI ID:
- 536307
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
Similar Records
Fabrication of InAs quantum dots in AlAs/GaAs DBR pillar microcavities for single photon sources
VCSELs based on arrays of sub-monolayer InGaAs quantum dots
Effects of annealing on self-assembled InAs quantum dots and wetting layer in GaAs matrix
Journal Article
·
Thu Mar 31 23:00:00 EST 2005
· Journal of Applied Physics
·
OSTI ID:20668271
VCSELs based on arrays of sub-monolayer InGaAs quantum dots
Journal Article
·
Mon May 15 00:00:00 EDT 2006
· Semiconductors
·
OSTI ID:21088538
Effects of annealing on self-assembled InAs quantum dots and wetting layer in GaAs matrix
Conference
·
Wed Apr 18 00:00:00 EDT 2001
·
OSTI ID:783766