VCSELs based on arrays of sub-monolayer InGaAs quantum dots

Journal Article · Mon May 15 00:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606050186· OSTI ID:21088538

Maleev, N A; Kuz'menkov, A G; Shernyakov, Yu M; Novikov, I I; Gordeev, N Yu; Dyudelev, V V; Sokolovskii, G S; Kuchinskii, V I; Kulagina, M M; Maximov, M V; Ustinov, V M ^[1]; Kovsh, A R; Mikhrin, S S; Ledentsov, N N ^[2]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
2. NL-Nanosemiconductors GmbH (Germany)

Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current aperture of 3 {mu}m in diameter demonstrate single-mode lasing in 980-nm range with the threshold current of 0.6 mA, maximum output power up to 4 mW, and external differential efficiency of 68%. Multimode VCSELs with a (10-12)-{mu}m aperture demonstrate ultralow internal optical loss of 0.09% per pass, which compares favorably with the best results obtained in similar lasers with undoped distributed Bragg reflectors.

• OSTI ID: 21088538
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 40; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
DOPED MATERIALS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASERS
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
THRESHOLD CURRENT