The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- St. Petersburg State Electrotechnical University (LETI) (Russian Federation)
- Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)
- NL-Nanosemiconductors GmbH (Germany)
- Industrial Technology Research Institute (China)
To suppress the generation of high-order modes in vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots, the method of formation of a spatially ordered array of etched holes in the upper distributed Bragg reflector was used. Single-mode vertical-cavity surface-emitting lasers for spectral region of 990 nm with current-aperture diameter of 20 {mu}m, threshold current 0.9 mA, and maximum output power 3.8 mW at room temperature were demonstrated. Single-mode lasing with the coefficient of side-mode suppression in excess of 35 dB is retained in the entire range of pump currents. A decrease in the current oxide aperture to sizes that are close to those of the optical aperture brings about an increase in the external quantum efficiency; however, in this case, the transition to the multimode of lasing is observed at high pump currents.
- OSTI ID:
- 21087987
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 41; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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