Fabrication of InAs quantum dots in AlAs/GaAs DBR pillar microcavities for single photon sources

Journal Article · Fri Apr 01 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1882764· OSTI ID:20668271

Bingyang, Zhang; Solomon, Glenn S; Pelton, Matthew; Plant, Jocelyn; Santori, Charles; Vuckovic, Jelena; Yamamoto, Yoshihisa ^[1]

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1. Quantum Entanglement Project, ICORP, JST, Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305-4085 (United States)

We report the molecular beam epitaxy growth of low-density strain-induced InAs quantum dots (QD) embedded in an AlAs/GaAs distributed Bragg reflector structure for a triggered photon source. By optimal selection of growth temperature, InAs deposited thickness and other experimental parameters, it is possible to grow low density (10/{mu}m{sup 2}) InAs quantum dots with a suitable emission wavelength for a triggered photon source. The empirical formulas for the refractive indices of AlAs and GaAs materials at high temperature over a wide wavelength range are constructed by combining high resolution x-ray diffraction, dynamic optical reflectivity, and optical reflectivity spectrum techniques. Utilizing the electron-beam lithography and electron-cyclotron-resonance plasma etching techniques, a micropost microcavity with the top diameter of 0.6 {mu}m and the post height of 4.2 {mu}m has been fabricated. Narrow, spectrally limited single QD emission embedded in a micropost microcavity is observed in the photoluminescence.

• OSTI ID: 20668271
• Journal Information: Journal of Applied Physics, Vol. 97, Issue 7; Other Information: DOI: 10.1063/1.1882764; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
ELECTRON BEAMS
ELECTRON CYCLOTRON-RESONANCE
ETCHING
FABRICATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHOTONS
PLASMA
QUANTUM DOTS
REFLECTIVITY
REFRACTIVE INDEX
SEMICONDUCTOR MATERIALS
WAVELENGTHS
X-RAY DIFFRACTION