Extended wavelength emission to 1.3 {mu}m in nitrided InAs/GaAs self-assembled quantum dots

Journal Article · Sat Jan 15 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1833578· OSTI ID:20665005

Kita, T; Mori, T; Seki, H; Matsushita, M; Kikuno, M; Wada, O; Ebe, H; Sugawara, M; Arakawa, Y; Nakata, Y ^[1]

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1. Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)

We have studied long-wavelength emission in 1.3-{mu}m optical communication range from nitrided InAs/GaAs quantum dots (QDs). Atomic-layer nitridation just after the growth of InAs QDs realizes a remarkable redshift of the photoluminescence peak by more than 150 nm. Growth temperature plays a key role in achieving room-temperature emission from the QDs. The emission wavelength can be adjusted by controlling the growth conditions of the initial InAs QDs. As compared with conventional QDs grown without nitridizing the QD surface, it is found that the nitridation results in larger dots with a large aspect ratio.

• OSTI ID: 20665005
• Journal Information: Journal of Applied Physics, Vol. 97, Issue 2; Other Information: DOI: 10.1063/1.1833578; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ASPECT RATIO
COMMUNICATIONS
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
NITRIDATION
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS