Use of reflectance spectroscopy for in-situ monitoring of InP/InGaAsP films grown by MOVPE

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:536278

Lum, R M; McDonald, M L; Bean, J C; Vandenberg, J; Pernell, T L; Chu, S N.G. ^[1]; Robertson, A; Karp, A ^[2]

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1. Bell Labs., Murray Hill, NJ (United States)
2. Bell Labs., Princeton, NJ (United States). Engineering Research Center

The authors report the first use of in-situ reflectance spectroscopy for real-time monitoring of the epitaxial growth of InP/InGaAsP films. Optical monitoring of this materials system has been limited by the strong absorption of InP/InGaAsP in the spectral range of commonly available Si-based array detectors ({lambda}{approximately}400--1,100 nm). In this work a Si/PbS dual detector arrangement, with a wavelength range 400--2,500 nm, and a grating spectrometer were used to acquire spectral data beyond the absorption regions of InP and InGaAsP. The quartz MOVPE reactor was modified with a simple optical viewport for acquisition of normal incidence reflectance spectra. Data were obtained on InP/InGaAs heterostructures, 1.55 {micro}m InP/InGaAsP Bragg stacks, and 1.3 {micro}m InGaAsP MQW laser structures.

• OSTI ID: 536278
• Report Number(s): CONF-960498--; ISBN 0-7803-3283-0
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EXPERIMENTAL DATA
GALLIUM ARSENIDES
IN-SITU PROCESSING
INDIUM PHOSPHIDES
ORGANOMETALLIC COMPOUNDS
REFLECTIVITY
SPECTROSCOPY
THIN FILMS
VAPOR PHASE EPITAXY