Realization of silicon based dielectrics anti-resonant reflecting optical waveguide (ARROW) on InP by photochemical deposition
- France Telecom/CNET/PAB, Bagneux (France). Lab. de Bagneux
Multiple dielectric layers have been largely studied and developed for optical passive devices fabricated on silicon. This work is promoting the use of Silicon as a platform for hybrid optoelectronic applications. For telecommunication applications, most of the optoelectronic devices and modules are made on InP substrates. Monolithic integration requires then the fabrication of the passive optical devices, such as waveguides, optical couplers, etc., directly on InP. A basic dielectric guide structure (Anti-Resonant Reflexion Optical Waveguide) has been studied and fabricated directly on InP. The use of Photo-assisted deposition techniques has allowed us to taylor the structural properties of each deposited film. The resulting attenuation of the structure fabricated on InP is 1.2 dB/cm. This is the best reported result on InP. The structure is well adopted to the InP substrate so that many passive devices utilizing the ARROW as the basic structure can be realized. As an example a directional coupler has been fabricated.
- OSTI ID:
- 536229
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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