Integration of detectors and optical-waveguide structures. Final report, 15 March 1985-15 March 1988
Integrated detection of light propagating in an optical waveguide with a photodetector array fabricated directly on the waveguide surface was demonstrated. Devices having very good performance were formed by depositing polycrystalline silicon and laser recrystallizing it prior to device fabrication. The use of two lasers was shown to result in improved recrystallization. Analysis of a four-layer optical waveguide structure was performed and applied to multiple layer gallium-aluminum-arsenide structures and SiO/sub 2//Si structures. Numerical calculations of waveguide attenuation due to substrate coupling for thermally-nitrided silicon dioxide and for gallium aluminum arsenide waveguides were performed for a variety of layer thicknesses, layer-material compositions, and wavelengths. Comparison with some experimental data was carried out. Extensive Raman microprobe characterization was also performed on laser-recrystallized silicon and on GaAlAs dielectric strip waveguide structures. use of rapid thermal annealing to initiate in-diffusion of Ti into LiNb0/sub 3/ has yielded low-loss optical waveguides.
- Research Organization:
- Cincinnati Univ., OH (USA). Dept. of Electrical and Computer Engineering
- OSTI ID:
- 6036794
- Report Number(s):
- AD-A-201331/6/XAB
- Country of Publication:
- United States
- Language:
- English
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42 ENGINEERING
PHOTODETECTORS
WAVEGUIDES
ALUMINIUM ARSENIDES
ANNEALING
ATTENUATION
DETECTION
DIELECTRIC MATERIALS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
LASERS
LAYERS
LITHIUM COMPOUNDS
NIOBATES
NUMERICAL ANALYSIS
PROGRESS REPORT
RAMAN SPECTRA
RECRYSTALLIZATION
SILICON
SILICON OXIDES
SUBSTRATES
SURFACES
THERMAL RADIATION
THICKNESS
ALKALI METAL COMPOUNDS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
DATA
DIMENSIONS
DOCUMENT TYPES
ELECTROMAGNETIC RADIATION
ELEMENTS
GALLIUM COMPOUNDS
HEAT TREATMENTS
INFORMATION
MATERIALS
MATHEMATICS
NIOBIUM COMPOUNDS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
RADIATIONS
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SILICON COMPOUNDS
SPECTRA
TRANSITION ELEMENT COMPOUNDS
440300* - Miscellaneous Instruments- (-1989)
420800 - Engineering- Electronic Circuits & Devices- (-1989)