Reproducibility in the fabrication of undoped semi-insulating InP
Book
·
OSTI ID:536172
- Japan Energy Corp., Toda, Saitama (Japan). Materials and Components Labs.
Various annealing conditions for realizing the fabrication of undoped semi-insulating (SI) InP has been systematically studied in their laboratory for these several years. In the present paper, these results are reported. It was found that by annealing at 950 C for 40 hrs under the phosphorus vapor pressure of 1 atm, the reproducible preparation of undoped SI InP can be achieved with the maximum number of 30 two-inch diameter wafers per batch. It was also found that a multiple-step wafer annealing (MWA) is very effective in improving the uniformity of electrical properties.
- OSTI ID:
- 536172
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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